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Property:M11L416256SA-35T
From BoxMatrix
| BoxMatrix >> Components >> M11L416256SA-35T | @ BoxMatrix - IRC-Chat - Translate: de es fr it nl pl |
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Component
| RAM-Chip: | M11L416256SA-35T | Wiki | Freetz | IPPF | whmf | Web | |
| Parent: | M11L416256SA | Wiki | Freetz | IPPF | whmf | Web | |
| Family: | D-512K | Wiki | Freetz | IPPF | whmf | Web | |
| Codename: | - | Wiki | Freetz | IPPF | whmf | Web | |
| Creator: | ESMT | Wiki | Freetz | IPPF | whmf | Web | |
| Vendor: | ESMT | Wiki | Freetz | IPPF | whmf | Web | |
| Alternative: | - | Wiki | Freetz | IPPF | whmf | Web | |
| Purpose: | DRAM | ||||||
| Interface: | - | ||||||
| Description: | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||||||
Model-Matrix
Selectors >> Chips-Selector >> RAM-Chips >> M11L416256SA-35T
| Box-Model | RAM-Chips | RAM | SoC | Clock | SoC-Chips |
|---|---|---|---|---|---|
| Eumex 400 | IS41LV16256-35T M11L416256SA-35T | 0.5 MB | UBIK2 | 24.6 MHz | |
| Eumex 2220PC | M11L416256SA-35T | 0.5 MB | UBIK1 | 12 MHz |
Chip-Relatives
Selectors >> Components-Selector >> RAM-Chips >> M11L416256SA-35T relatives
| RAM-Chip | Mod. | Family | Codename | Purpose | Altern. | Creator | Vendor | Description |
|---|---|---|---|---|---|---|---|---|
| AS4C256K16E0-50JC | 2 | D-512K | DRAM | Alliance | Alliance | DRAM 50ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| AS4LC256K16F0-50TC | 1 | D-512K | DRAM | Alliance | Alliance | DRAM 50ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| GM71C4270AJ70 | 3 | D-512K | DRAM | LG Semicon | Hynix | FPM DRAM 70ns, 256K x 16bit = 512KB | ||
| IC41LV16256-35T | 3 | D-512K | DRAM | ICSI | ISSI | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| IS41C16256-35K | 1 | D-512K | DRAM | ICSI | ISSI | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| IS41LV16256-35T | 5 | D-512K | DRAM | ICSI | ISSI | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| KM416C2568J-6 | 1 | D-512K | DRAM | Samsung | Samsung | FPM DRAM 60ns, 256K x 16bit = 512KB | ||
| KM416V256DT-L6 | 2 | D-512K | DRAM | Samsung | Samsung | FPM DRAM 60ns, 3.3V, 256K x 16bit = 512KB | ||
| M11L416256SA-35I | 2 | D-512K | DRAM | ESMT | ESMT | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| M11L416256SA-35T | 2 | D-512K | DRAM | ESMT | ESMT | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB | ||
| MB814260-60 | 1 | D-512K | DRAM | Fujitsu | Fujitsu | DRAM 60ns with Fast Page Mode, 256K x 16bit = 512KB | ||
| MT4C16256DJ-7 | 2 | D-512K | DRAM | Micron | Micron | FPM DRAM 70ns, 256K x 16bit = 512KB | ||
| MT4C16257DJ-6 | 1 | D-512K | DRAM | Micron | Micron | FPM DRAM 60ns, 256K x 16bit = 512KB | ||
| TC514260DFTS-60 | 2 | D-512K | DRAM | Toshiba | Toshiba | DRAM 60ns, 256K x 16bit = 512KB | ||
| UPD424270-70 | 2 | D-512K | DRAM | NEC | Elpida | FPM DRAM 70ns, 256K x 16bit = 512KB | ||
| V53C16258HK35 | 2 | D-512K | DRAM | MVC | MVC | DRAM 35ns with EDO Page Mode, 256K x 16bit = 512KB |
